Method to form hemispherical grain (HSG) silicon by implant seed

Details Method to form hemispherical grain (HSG) silicon by implant seed Method to form hemispherical grain (HSG) silicon by implant seed

1995-05-11

1997-08-19

Garrett, Felisa

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

117 7, 257317, 438398, 438665, 438964, C30B 3122

Patent

active

056583818

ABSTRACT:
Hemispherical grain (HSG) silicon for a semiconductor device, is formed by: introducing a crystallization nucleus into a silicon material; and converting the silicon material into the HSG silicon by promoting the growth of the crystallization nucleus during a high vacuum anneal. An embodiment of the present invention is a semiconductor device having hemispherical grain (HSG) silicon, where the HSG silicon comprises a silicon material converted into the HSG silicon from the growth of at least one implanted crystallization nucleus.

REFERENCES:
patent: 5162248 (1992-11-01), Dennison et al.
patent: 5340765 (1994-08-01), Dennison et al.

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