Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-07-05
2005-07-05
Nguyen, Ha Tran (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S706000, C438S725000, C438S745000
Reexamination Certificate
active
06913994
ABSTRACT:
An improved method of forming a dual damascene structure that includes an organosilicate glass (OSG) dielectric layer is described. A via first process is followed in which a via is formed in the OSG layer and preferably stops on a SiC layer. The SiC layer is removed prior to stripping a photoresist containing the via pattern. A planarizing BARC layer is formed in the via to protect the exposed substrate from damage during trench formation. The method provides higher Kelvin via and via chain yields. Damage to the OSG layer at top corners of the via and trench is avoided. Furthermore, there is no pitting in the OSG layer at the trench bottom. Vertical sidewalls are achieved in the via and trench openings and via CD is maintained. The OSG loss during etching is minimized by removing the etch stop layer at an early stage of the dual damascene sequence.
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Bliznetsov Vladimir N.
Bu Xiaomei
Guo Qiang
Krishnamoorthy Ahila
Ackerman Stephen B.
Agency for Science Technology and Research
Nguyen Ha Tran
Saile George O.
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