Method to form copper seed layer for copper interconnect

Details Method to form copper seed layer for copper interconnect Method to form copper seed layer for copper interconnect

2005-03-29

2005-03-29

Thai, Luan (Department: 2829)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S679000, C438S680000, C438S628000, C438S643000, C438S644000, C438S629000

Reexamination Certificate

active

06872657

ABSTRACT:
Copper seed layers for use in damascene structures are commonly deposited by CVD because of their superior step coverage. However, these films have poor adhesion to the barrier layer. This problem has been overcome by preceding the deposition of the CVD copper layer with a metal plasma treatment that lays down a very thin layer of copper while the structure receiving it is maintained at a temperature below about −40 C. This is followed by a short exposure to a nitrogen bearing plasma. The results is a seed layer having excellent step coverage as well as very good adhesion to the underlying barrier layer.

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patent: 6355106 (2002-03-01), Zheng et al.
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patent: 20020068449 (2002-06-01), Hashim et al.
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