Method to form both high and low-k materials over the same...

Details Method to form both high and low-k materials over the same... Method to form both high and low-k materials over the same...

2008-01-29

2008-01-29

Ahmed, Shamim (Department: 1765)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S068000, C428S549000

Reexamination Certificate

active

11438188

ABSTRACT:
A new method of provided for forming in one plane layers of semiconductor material having both high and low dielectric constants. Layers, having selected and preferably non-identical parameters of dielectric constants, are successively deposited interspersed with layers of etch stop material. The layers can be etched, creating openings there-through that can be filled with a layer of choice.

REFERENCES:
patent: 6008102 (1999-12-01), Alford et al.
patent: 6057202 (2000-05-01), Chen et al.
patent: 6143646 (2000-11-01), Wetzel
patent: 6258688 (2001-07-01), Tsai
patent: 6566260 (2003-05-01), Chooi et al.
patent: 2002/0064922 (2002-05-01), Lin

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