Method to form an interconnect

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S940000

Reexamination Certificate

active

07135405

ABSTRACT:
Embodiments of methods, apparatuses, devices, and/or systems for forming an interconnect are described.

REFERENCES:
patent: 5236551 (1993-08-01), Pan
patent: 5262718 (1993-11-01), Svendsen et al.
patent: 6121130 (2000-09-01), Chua et al.
patent: 6228685 (2001-05-01), Beroz et al.
patent: 6344662 (2002-02-01), Dimitrakopoulos et al.
patent: 6602790 (2003-08-01), Kian et al.
patent: 6620731 (2003-09-01), Farnworth
patent: 6858461 (2005-02-01), Oswald et al.
patent: 6861377 (2005-03-01), Hirai
patent: 6867081 (2005-03-01), Weng et al.
patent: 2003/0047729 (2003-03-01), Hirai et al.
patent: 2003/0054579 (2003-03-01), Pakbaz et al.
patent: 2003/0160235 (2003-08-01), Hirai
patent: 2003/0164915 (2003-09-01), Fujiwara et al.
patent: 2003/0211649 (2003-11-01), Hirai et al.
patent: 2003/0224152 (2003-12-01), Yokoyama
patent: 2004/0009304 (2004-01-01), Pichler et al.
patent: 2004/0147113 (2004-07-01), Yamazaki
patent: 0 357 124 (1990-03-01), None
patent: 2004-006700 (2004-01-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method to form an interconnect does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method to form an interconnect, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method to form an interconnect will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3633604

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.