Method to form an alignment mark

Details Method to form an alignment mark Method to form an alignment mark

1998-11-13

2000-06-27

Bowers, Charles

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438401, 438462, 438637, 438648, 438672, 438685, H01L 2176

Patent

active

060806591

ABSTRACT:
A method to form a better quality of an alignment pattern includes several steps, first starts from forming a polysilicon layer on a semiconductor substrate. Next, most of a central portion of the polysilicon layer is removed to expose the substrate. Then, an oxide layer is formed over the substrate and is patterned to form an opening, which exposes the substrate. A W layer is deposited over the substrate and is planarized by WCMP process to form a W plug inside the opening. A metal layer is formed over the substrate. The alignment mark pattern is formed on the metal layer.

REFERENCES:
patent: 5747369 (1998-05-01), Kantimahanti et al.
patent: 5858854 (1999-01-01), Tsai et al.
patent: 5877562 (1999-03-01), Sur et al.
patent: 5952241 (1999-09-01), Baker et al.
patent: 5958800 (1999-09-01), Yu et al.

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