Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device
Patent
1998-05-07
2000-08-15
Duda, Kathleen
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Making electrical device
430317, 438618, 438637, 438675, G03F 726
Patent
active
06103455&
ABSTRACT:
A method of forming a deep contact by forming a dielectric layer 20 over a semiconductor structure 10. A main point is that the hard mask 30 is removed after the plug 52 is formed. A hard mask layer 30 is formed over the dielectric layer 20. A contact photoresist layer 36 is formed over the hard mask layer 30. The hard mask layer 30 is etched through the contact photoresist opening 39 to form a contact hard mask opening 41 exposing the dielectric layer 20. The dielectric layer 20 is etched using a high density plasma etch process using the contact photoresist layer 36 and the hard mask layer 30 as an etch mask forming a contact hole 40 in the dielectric layer 20. The contact photoresist layer 36 is removed. A metal layer 50 is formed filling the contact hole 40 and covering over the hard mask layer 30. The metal layer 50 is etched back forming a plug 52 filling the contact hole 40. Now, the hard mask layer 30 is removed. The removal of the hard mask 30 after the metal layer 50 deposition: (a) prevents the contact hole 40 from being contaminated from photoresist and other contamination formed during the hard mask 30 removal steps; and (b) creates a plug 52 that does not have a recess.
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Chiang Wen-Chuan
Huang Kuo Ching
Lee Yu-Hua
Wu Cheng-Ming
Ackerman Stephen B.
Duda Kathleen
Saile George O.
Stoffel William J.
Taiwan Semiconductor Manufacturing Company
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