Semiconductor device manufacturing: process – Semiconductor substrate dicing
Reexamination Certificate
2008-09-11
2010-11-30
Brewster, William M (Department: 2823)
Semiconductor device manufacturing: process
Semiconductor substrate dicing
C438S459000, C438S507000, C438S458000, C438S455000, C438S057000, C257SE21001, C257SE31001
Reexamination Certificate
active
07842585
ABSTRACT:
A very thin photovoltaic cell is formed by implanting gas ions below the surface of a donor body such as a semiconductor wafer. Ion implantation defines a cleave plane, and a subsequent step exfoliates a thin lamina from the wafer at the cleave plane. A photovoltaic cell, or all or a portion of the base or emitter of a photovoltaic cell, is formed within the lamina. In preferred embodiments, the wafer is affixed to a receiver before the cleaving step. Electrical contact can be formed to both surfaces of the lamina, or to one surface only.
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Agarwal Aditya
Herner S. Brad
Petti Christopher J.
Sivaram Srinivasan
Baptiste Wilner Jean
Brewster William M
Twin Creeks Technologies, Inc.
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