Method to form a DRAM capacitor using low temperature reoxidatio

Details Method to form a DRAM capacitor using low temperature reoxidatio Method to form a DRAM capacitor using low temperature reoxidatio

1999-08-04

2000-12-19

Niebling, John F.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438151, 438788, 438396, 438253, H01L 2100, H01L 218242, H01L 2120, H01L 2131, H01L 21469

Patent

active

06162666&

ABSTRACT:
An embodiment of the present invention teaches a capacitor dielectric in a wafer cluster tool for semiconductor device fabrication formed by a method by the steps of: forming nitride adjacent a layer by rapid thermal nitridation; and subjecting the nitride to an ozone ambient, wherein the ozone ambient is selected from the group consisting of an ambient containing an the presence of ultraviolet light and ozone gas, an ambient containing an ozone gas or an ambient containing an NF.sub.3 /ozone gas mixture.

REFERENCES:
patent: 5322809 (1994-06-01), Moslehi
patent: 5434109 (1995-07-01), Geissler et al.
patent: 5510158 (1996-04-01), Hiramoto
patent: 5523596 (1996-06-01), Ohi
patent: 5597754 (1997-01-01), Lou
patent: 5622607 (1997-04-01), Yamazaki et al.
patent: 5840600 (1998-11-01), Yamazaki et al.
patent: 5973911 (1999-10-01), Nishioka

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