Method to form a contact hole

Details Method to form a contact hole Method to form a contact hole

2007-11-06

2007-11-06

Pham, Long (Department: 2814)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S622000, C438S624000, C438S637000

Reexamination Certificate

active

10778293

ABSTRACT:
A example method of forming of a contact hole by removing residue and oxide spacer beside a nitride spacer after a CF containing etch. We provide a gate structure with nitride spacers on the sidewalls of the gate. We provide a dielectric layer (oxide) over the substrate and gate structure. We form a contact photoresist pattern over the oxide dielectric layer. We etch the oxide dielectric layer using fluorocarbons (CxFy) to form contact openings and residual spacer. The photoresist is striped. Preferably, a NF3and N2and H2plasma treatment is performed to deposit a byproducts layer over the residual spacer. The byproducts layer and residual spacer are removed preferably using one of the following processes: (1) heat (2) DI rinse or (3) IR or UV radiation.

REFERENCES:
patent: 5423945 (1995-06-01), Marks et al.
patent: 5505816 (1996-04-01), Barnes et al.
patent: 6536449 (2003-03-01), Ranft et al.
patent: 6583065 (2003-06-01), Williams et al.
Hu et al., “Resist stripping for multilevel interconnect integration with Low K dielectric material”, AVS first inter conference on Microelectronics and interfaces, Feb. 2000.

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