Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-06-07
2005-06-07
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C118S719000
Reexamination Certificate
active
06903013
ABSTRACT:
An improved method to deposit, by atomic layer deposition, ALD, a copper barrier and seed layer for electroless copper plating, filling trench and channel or tunnel openings in a damascene process, for the fabrication of interconnects and inductors, has been developed. A process flow outlining the method of the present invention is as follows: (1) formation of trenches and channels, (2) atomic layer deposition of copper barrier and seed, (3) electroless deposition of copper, (4) chemical mechanical polishing back of excess copper, and (5) barrier deposition, SiN, forming copper interconnects and inductors.
REFERENCES:
patent: 5124192 (1992-06-01), Kim et al.
patent: 6008102 (1999-12-01), Alford et al.
patent: 6042652 (2000-03-01), Hyun et al.
patent: 6146458 (2000-11-01), Hooper et al.
patent: 6225221 (2001-05-01), Ho et al.
patent: 6305314 (2001-10-01), Sneh et al.
patent: 6316359 (2001-11-01), Simpson
patent: 6329234 (2001-12-01), Ma et al.
patent: 6368954 (2002-04-01), Lopatin et al.
patent: 6423201 (2002-07-01), Mandrekar
patent: 6596643 (2003-07-01), Chen et al.
patent: 2003/0008243 (2003-01-01), Ahn et al.
CS-01-127, U.S. Appl. No. 10/400,511, filed Mar. 27, 2003, assigned to a common assignee, “A Method of Forming a Surface Coating Layer Within an Opening Within a Body by Atomic Layer Desposition”.
Chan Lap
Chu Sanford
Ju Yong
Ng Chit Hwei
Zheng Jia Zhen
Chartered Semiconductor Manufacturing Ltd.
Fourson George
Pike Rosemary L. S.
Saile George O.
Toledo Fernando L.
LandOfFree
Method to fill a trench and tunnel by using ALD seed layer... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method to fill a trench and tunnel by using ALD seed layer..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method to fill a trench and tunnel by using ALD seed layer... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3478777