Method to fabricate aligned dual damascene openings

Details Method to fabricate aligned dual damascene openings Method to fabricate aligned dual damascene openings

2008-05-13

2008-05-13

Smith, Bradley K (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257SE21579

Reexamination Certificate

active

11174805

ABSTRACT:
An aligned dual damascene opening structure, comprising the following. A structure having a metal structure formed thereover. A patterned layer stack over the metal structure; the layer stack comprising, in ascending order: a patterned bottom etch stop layer; a patterned lower dielectric material layer; a patterned middle etch stop layer; and a patterned middle dielectric material layer; the lower and middle dielectric layers being comprised of the same material. An upper trench opening in the patterned bottom etch stop layer and the patterned lower dielectric material layer; and a lower via opening in the patterned middle etch stop layer and the patterned middle dielectric material layer. The lower via opening being in communication with the upper trench opening. Wherein the upper trench opening and the lower via opening comprise an aligned dual damascene opening.

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patent: 2003/0008511 (2003-01-01), Tsai et al.
patent: 2005/0277277 (2005-12-01), Liu et al.

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