Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2006-07-25
2006-07-25
Nguyen, VanThu (Department: 2824)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S203000, C365S209000, C365S230060
Reexamination Certificate
active
07082050
ABSTRACT:
A magnetic random access memory (10) with equalization has a plurality of magnetic memory elements that perform a memory operation. A word line magnetically activates at least one magnetic memory element. A sense line detects the state of the at least one magnetic memory element. A word line driver is connected to the word line to drive a current on the word line during the memory operation. A word line equalizer is connected to the word line to equalize the word line during the non-memory operations.
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Jones Day
Nguyen Van-Thu
Union Semiconductor Technology Corporation
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