Method to eliminate polycide peeling at wafer edge using extende

Details Method to eliminate polycide peeling at wafer edge using extende Method to eliminate polycide peeling at wafer edge using extende

1994-05-06

1997-02-04

Fourson, George

Fishing, trapping, and vermin destroying

437193, 437226, 437977, H01L 2128

Patent

active

055997465

ABSTRACT:
A method for eliminating the peeling of polycide at the edge of a wafer used to fabricate semi-conductors and integrated circuits. A global rough surface is formed on the wafer. The rough surface on the substrate wafer releases most of the thermal stress between the silicide and polysilicon layers which are found in conventional devices. A "peel free" surface results and the particle problem is lessened.

REFERENCES:
patent: 3615956 (1971-10-01), Irving et al.
patent: 3739463 (1973-06-01), Aird et al.
patent: 4610079 (1986-09-01), Abe et al.
S. Wolf, "Silicon Processing For the VLSI Era, vol. I," Lattice Press, 1986, pp. xxiii-xxiv.

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