Method to eliminate Cu dislocation for reliability and yield

Details Method to eliminate Cu dislocation for reliability and yield Method to eliminate Cu dislocation for reliability and yield

2011-03-01

2011-03-01

Vu, David (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257S503000, C257S774000, C257SE23145

Reexamination Certificate

active

07897508

ABSTRACT:
Embodiments in accordance with the present invention provide methods of forming a metal interconnect structure which avoid defects arising from copper migration. In accordance with particular embodiments, an electroplated copper feature is subjected to a brief thermal anneal prior to chemical mechanical polishing and subsequent formation of an overlying barrier layer. This thermal anneal intentionally provokes migration of the copper and resulting formation of hillocks or voids, which are then removed by a CMP step. The barrier layer may thus subsequently be formed over a defect-free surface, which has already experienced stress release along grain boundaries as a result of the thermal treatment.

REFERENCES:
patent: 6069068 (2000-05-01), Rathore et al.
patent: 6130161 (2000-10-01), Ashley et al.
patent: 6136680 (2000-10-01), Lai et al.
patent: 6207222 (2001-03-01), Chen et al.
patent: 6258710 (2001-07-01), Rathore et al.
patent: 6287954 (2001-09-01), Ashley et al.
patent: 6391777 (2002-05-01), Chen et al.
patent: 6492270 (2002-12-01), Lou
patent: 6548395 (2003-04-01), Woo et al.
patent: 6562712 (2003-05-01), Liu et al.
patent: 6709970 (2004-03-01), Park et al.
patent: 6764951 (2004-07-01), van Ngo
patent: 6838772 (2005-01-01), Saitoh et al.
patent: 6936881 (2005-08-01), Yeo et al.
patent: 6949832 (2005-09-01), Kunishima et al.
patent: 7033929 (2006-04-01), Burke et al.
patent: 7067919 (2006-06-01), Watanabe et al.
patent: 7074709 (2006-07-01), Young
patent: 7088003 (2006-08-01), Gates et al.
patent: 7141882 (2006-11-01), Watanabe
patent: 7173337 (2007-02-01), Watanabe et al.
patent: 7201784 (2007-04-01), Miller et al.
patent: 2002/0037641 (2002-03-01), Ritzdorf et al.
patent: 2002/0098681 (2002-07-01), Hu et al.
patent: 2002/0192944 (2002-12-01), Sonderman et al.
patent: 2003/0116852 (2003-06-01), Watanabe et al.
patent: 2003/0160326 (2003-08-01), Uzoh et al.
patent: 2003/0214043 (2003-11-01), Saitoh et al.
patent: 2004/0113277 (2004-06-01), Chiras et al.
patent: 2004/0132381 (2004-07-01), Basol et al.
patent: 2004/0224495 (2004-11-01), Young
patent: 2005/0121788 (2005-06-01), Watanabe et al.
patent: 2005/0184397 (2005-08-01), Gates et al.
patent: 2005/0186782 (2005-08-01), Burke et al.
patent: 2005/0212137 (2005-09-01), Yamamoto et al.
patent: 2005/0239278 (2005-10-01), Li et al.
patent: 2005/0266673 (2005-12-01), Hu et al.
patent: 2006/0121733 (2006-06-01), Kilpela et al.
patent: 2006/0252258 (2006-11-01), Wu et al.
patent: 2006/0286797 (2006-12-01), Zhang et al.

Affiliated with

Also associated with

Rating

Method to eliminate Cu dislocation for reliability and yield does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method to eliminate Cu dislocation for reliability and yield, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method to eliminate Cu dislocation for reliability and yield will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2765790