Method to create super secondary grain growth in narrow...

Details Method to create super secondary grain growth in narrow... Method to create super secondary grain growth in narrow...

2007-04-10

2008-11-18

Le, Thao P. (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S637000

Reexamination Certificate

active

07452812

ABSTRACT:
The present invention relates to a method for obtaining enlarged Cu grains in small trenches. More specifically it related to a method for creating enlarged copper grains or inducing super secondary grain growth in electrochemically deposited copper in narrow trenches and/or vias to be used in semiconductor devices.

REFERENCES:
patent: 2005/0150770 (2005-07-01), Chen
patent: 2005/0153545 (2005-07-01), Hong
patent: 2005/0153548 (2005-07-01), Hong
patent: 2005/0186793 (2005-08-01), Omoto et al.

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