Method to create a metal pattern using a damascene-like process

Details Method to create a metal pattern using a damascene-like process Method to create a metal pattern using a damascene-like process

2011-08-30

2011-08-30

Wagner, Jenny L. (Department: 2891)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S637000, C438S672000, C438S675000, C257SE23169

Reexamination Certificate

active

08008196

ABSTRACT:
A method of forming a metal pattern on a dielectric layer that comprises forming at least one trench in a dielectric layer formed from a photosensitive, insulative material is disclosed. A conformed metal layer is formed over the dielectric layer and into the at least one trench and a photoresist layer is formed over the metal layer. The photoresist layer may be deposited so that a photoresist material fills the at least one trench. At least a portion of the photoresist layer is selectively removed. For instance, portions of the photoresist layer surrounding the at least one trench may be removed while a portion of the photoresist layer remains therein. At least a portion of the metal layer is selectively removed, such as portions of the metal layer surrounding the at least one trench. The photoresist layer remaining in the at least one trench may subsequently be removed. Intermediate semiconductor device structures are also disclosed.

REFERENCES:
patent: 4592800 (1986-06-01), Landau et al.
patent: 5045903 (1991-09-01), Meyer et al.
patent: 5182234 (1993-01-01), Meyer
patent: 5256583 (1993-10-01), Hollinger
patent: 5582679 (1996-12-01), Lianjun et al.
patent: 5648283 (1997-07-01), Tsang et al.
patent: 5670425 (1997-09-01), Schinella et al.
patent: 5789118 (1998-08-01), Liu et al.
patent: 5801417 (1998-09-01), Tsang et al.
patent: 5881125 (1999-03-01), Dao
patent: 6011314 (2000-01-01), Leibovitz et al.
patent: 6350705 (2002-02-01), Lin
patent: 6549266 (2003-04-01), Taniguchi
patent: 7105379 (2006-09-01), Tsao et al.

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