Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Reexamination Certificate
2005-04-05
2005-04-05
Thai, Luan (Department: 2829)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
C435S287300, C435S197000
Reexamination Certificate
active
06875677
ABSTRACT:
Methods of forming an interfacial layer on a hydrogen-passivated substrate are provided. These methods utilize atomic layer deposition techniques incorporating metal nitrate-based precursors, such as hafnium nitrate or zirconium nitrate, without introducing a hydrating agent, or oxidizing agent, such as water, during the formation of the interfacial layer. Also provided are methods of forming high-k films, by first forming an interfacial layer on the surface of a hydrogen-passivated substrate, and then depositing one, or more, high-k dielectric films.
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Conley, Jr. John F.
Ono Yoshi
Curtin Joseph P.
Rabdau Matthew D.
Ripma David C.
Sharp Laboratories of America Inc.
Thai Luan
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