Method to control artifacts of microstructural fabrication

Etching a substrate: processes – Masking of a substrate using material resistant to an etchant

Reexamination Certificate

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Details

C216S046000, C216S059000, C216S051000

Reexamination Certificate

active

07105098

ABSTRACT:
New methods for fabrication of silicon microstructures have been developed. In these methods, an etching delay layer is deposited and patterned so as to provide differential control on the depth of features being etched into a substrate material. Compensation for etching-related structural artifacts can be accomplished by proper use of such an etching delay layer.

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