Excavating
Patent
1995-06-07
1997-05-27
Nguyen, Hoa T.
Excavating
39518316, 39518508, 371 28, G01R 3130, G06F 1125
Patent
active
056340010
ABSTRACT:
A method and system are provided for determining a guard band voltage differential for testing a microprocessor. The guard band voltage differential approximates microprocessor circuit propagation delay degradation expected to occur over the life of the microprocessor. The system and method are performed by first partitioning a microprocessor into a plurality of cones of n circuit level models. Timing simulation data and degradation data are created to represent, respectively, the timing operation for each of the circuit level model circuit paths, and the hot-electron effects on propagation delay degradation for each of the circuit level models. Propagation delay is identified using this data for each of the circuit paths for the circuit level models at times corresponding to the beginning-of-life and end-of-life of the microprocessor. Propagation delay degradation is calculated as the difference between the propagation delay at these times. A range of applied power supply voltages necessary to successfully perform a functional test of the microprocessor over a corresponding range of microprocessor cycle times is experimentally determined. Based on the calculated propagation delay degradation and on the range of applied power supply voltages, a guard band voltage differential for testing the microprocessor is determined.
REFERENCES:
patent: 4502140 (1985-02-01), Proebsting
patent: 4642492 (1987-02-01), Beck et al.
patent: 4870575 (1989-09-01), Rutenberg
patent: 4907230 (1990-03-01), Heller et al.
patent: 4928062 (1990-05-01), Miles et al.
patent: 5134447 (1992-07-01), Ng et al.
patent: 5208765 (1993-05-01), Turnbull
patent: 5223792 (1993-06-01), El-Ayat et al.
patent: 5262683 (1993-11-01), Cook
patent: 5278769 (1994-01-01), Bair et al.
patent: 5296401 (1994-03-01), Mitsui et al.
patent: 5306655 (1994-04-01), Kurimoto
patent: 5383194 (1995-01-01), Sloan et al.
patent: 5533197 (1996-07-01), Moran et al.
Raje. "Accurate Delay Models for Digital BICMOS", IEEE Transactions of Electron Devices, vol. 39, No. 6, pp. 1426-1464 Jun. 1992.
Najm, "Transistion Density: A New Measure of Activity in Digital Circuits", IEEE Transactions on Computer Aided Design of intergrated Circuits and systems, vol. 12, No. 2, pp. 310-323 Feb. 1993.
Mittl Steven W.
Moran David E.
O'Gorman Timothy J.
Watson Kimball M.
International Business Machines - Corporation
Nguyen Hoa T.
Palys Joseph E.
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