Method to avoid threshold voltage shift in thicker...

Details Method to avoid threshold voltage shift in thicker... Method to avoid threshold voltage shift in thicker...

2006-06-27

2006-06-27

Thomas, Tom (Department: 2315)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

Reexamination Certificate

active

07067442

ABSTRACT:
A method of fabricating an integrated circuit having reduced threshold voltage shift is provided. A nonconducting region is formed on the semiconductor substrate and active regions are formed on the semiconductor substrate. The active regions are separated by the nonconducting region. A barrier layer and a dielectric layer are deposited over the nonconducting region and over the active regions. Heat is applied to the integrated circuit causing the barrier layer to anneal.

REFERENCES:
patent: 3925572 (1975-12-01), Naber
patent: 4708767 (1987-11-01), Bril
patent: 4824802 (1989-04-01), Brown et al.
patent: 4849797 (1989-07-01), Ukai et al.
patent: 4863755 (1989-09-01), Hess et al.
patent: 4879257 (1989-11-01), Patrick
patent: 4917759 (1990-04-01), Fisher et al.
patent: 4976856 (1990-12-01), Van Der Scheer et al.
patent: 4992840 (1991-02-01), Haddad et al.
patent: 5077238 (1991-12-01), Fujii et al.
patent: 5084407 (1992-01-01), Boland et al.
patent: 5113790 (1992-05-01), Geisler et al.
patent: 5132239 (1992-07-01), Ghezzi et al.
patent: 5164330 (1992-11-01), Davis et al.
patent: 5166088 (1992-11-01), Ueda et al.
patent: 5196907 (1993-03-01), Birkle et al.
patent: 5223736 (1993-06-01), Rodder
patent: 5236862 (1993-08-01), Pfiester et al.
patent: 5260232 (1993-11-01), Muroyama et al.
patent: 5372974 (1994-12-01), Doan et al.
patent: 5384288 (1995-01-01), Ying
patent: 5399532 (1995-03-01), Lee et al.
patent: 5468689 (1995-11-01), Cunningham et al.
patent: 5474955 (1995-12-01), Thakur
patent: 5504347 (1996-04-01), Jovanovic et al.
patent: 5531183 (1996-07-01), Sivaramakrishnam et al.
patent: 5532193 (1996-07-01), Maeda et al.
patent: 5552343 (1996-09-01), Hsu
patent: 5576565 (1996-11-01), Yamaguchi et al.
patent: 5585308 (1996-12-01), Sardella
patent: 5650359 (1997-07-01), Ahlburn
patent: 5753547 (1998-05-01), Ying
patent: 6033979 (2000-03-01), Endo
patent: 0327412 (1989-08-01), None
patent: 0509631 (1992-10-01), None
patent: 0 366 343 (1996-03-01), None
patent: 01(64)-047055 (1989-02-01), None
patent: 03-280543 (1991-12-01), None
patent: 04-067632 (1992-03-01), None
patent: 04-326732 (1992-11-01), None

Affiliated with

Also associated with

Rating

Method to avoid threshold voltage shift in thicker... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method to avoid threshold voltage shift in thicker..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method to avoid threshold voltage shift in thicker... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3673211