Method to avoid copper contamination of a via or dual...

Details Method to avoid copper contamination of a via or dual... Method to avoid copper contamination of a via or dual...

2006-02-28

2006-02-28

Wilczewski, Mary (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S639000, C438S672000, C438S675000, C438S696000, C438S720000, C438S722000, C438S742000

Reexamination Certificate

active

07005375

ABSTRACT:
A process for preventing interconnect metal diffusion into the surrounding dielectric material. Prior to the formation of a metal interconnect in an opening of a dielectric region, the underlying metal surface is cleaned, during which metal can be deposited on the sidewalls of the opening. This metal can diffuse into the dielectric and cause leakage currents. To prevent deposition of the metal onto the sidewalls a barrier layer is deposited into the opening and sputtered onto the sidewalls before the metal surface cleaning step.

REFERENCES:
patent: 5821168 (1998-10-01), Jain
patent: 5985762 (1999-11-01), Geffken et al.
patent: 6114243 (2000-09-01), Gupta et al.
patent: 6177347 (2001-01-01), Liu et al.
patent: 6251789 (2001-06-01), Wilson et al.
patent: 6265313 (2001-07-01), Huang et al.
patent: 6287977 (2001-09-01), Hashim et al.
patent: 6498091 (2002-12-01), Chen et al.
patent: 6521533 (2003-02-01), Morand et al.
patent: 6576982 (2003-06-01), You et al.
patent: 6607977 (2003-08-01), Rozbicki et al.
patent: 2001/0049181 (2001-12-01), Rathi et al.
patent: 2002/0001952 (2002-01-01), Chooi et al.
patent: 2002/0068458 (2002-06-01), Chiang et al.
patent: 2002/0117399 (2002-08-01), Chen et al.
patent: 2002/0142622 (2002-10-01), Iljima et al.
patent: 2002/0162736 (2002-11-01), Ngo et al.
patent: 2003/0116427 (2003-06-01), Ding et al.
patent: 1 233 448 (2002-08-01), None
patent: 1 233 448 (2002-08-01), None
patent: WO 98/52219 (1998-11-01), None
patent: WO 02/39500 (2002-05-01), None
patent: WO 03/048407 (2003-06-01), None

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