Method to assess electromigration and hot electron reliability f

Details Method to assess electromigration and hot electron reliability f Method to assess electromigration and hot electron reliability f

1994-10-21

1996-07-02

Beausoliel, Jr., Robert W.

39518316, G06F 1100

Patent

active

055331971

ABSTRACT:
A method of assessing the tolerance of a microprocessor to propagation time degradation caused by electromigration effects and hot electron effects is provided. Reference values for interconnection resistance (IR) degradation and drain current (DC) degradation are compute, at nominal fabrication process and microprocessor lifetime application conditions. These results may be tabulated for a plurality of output driver load capacitances. Test IR degradation and test DC degradation values are calculated by scaling the reference IR and DC degradation values, respectively, for actual test conditions. The circuit propagation time and the propagation delay degradation caused by both electromigration and hot electron effects are calculated at process and lifetime environmental conditions. A timing equation is evaluated using distinctly identified components of the propagation delay degradation caused by electromigration and hot electron effects, to assess the toleration of the microprocessor to electromigration and hot electron induced propagation delay degradation.

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