Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-05-25
2008-05-20
Toledo, Fernando L. (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257SE21579
Reexamination Certificate
active
07375030
ABSTRACT:
Numerous embodiments of a method to assay sacrificial material are disclosed. In one embodiment, a sacrificial material may be analyzed by high performance liquid chromatography. Chemical markers that correlate with material contaminants in the sacrificial material may be identified.
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patent: 6365529 (2002-04-01), Hussein et al.
patent: 6448185 (2002-09-01), Andideh et al.
patent: 6506692 (2003-01-01), Andideh et al.
Choi Hok-Kin
Meagley Robert P.
Blakely , Sokoloff, Taylor & Zafman LLP
Intel Corporation
Toledo Fernando L.
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