Method to achieve continuous hydrogen saturation in...

Details Method to achieve continuous hydrogen saturation in... Method to achieve continuous hydrogen saturation in...

2005-03-22

2005-03-22

Beck, Shrive P. (Department: 1762)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

43, 43, 43, 43, C438S761000, C438S758000

Reexamination Certificate

active

06869875

ABSTRACT:
An improved wire bonding process for copper-metallized integrated circuits is provided by a nickel layer that acts as a barrier against up-diffusing copper. In accordance with the present invention the nickel bath is placed and remains in hydrogen saturation by providing a piece of metal that remains in the nickel plating tank before and during the plating process.

REFERENCES:
patent: 6616967 (2003-09-01), Test
patent: 20010033020 (2001-10-01), Stierman et al.
patent: 20010035452 (2001-11-01), Test et al.
patent: 2001-107254 (2001-04-01), None
patent: 2001-107254 (2001-04-01), None

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