Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Bump leads
Reexamination Certificate
2006-03-13
2008-08-12
Kebede, Brook (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Bump leads
C257SE23021, C438S613000
Reexamination Certificate
active
07411296
ABSTRACT:
A method, system, and apparatus, the apparatus including a metal layer on silicon, photo-resist material disposed on the metal layer, a bump pad reservoir adjacent to the metal layer, a quantity of interconnect metal disposed in the bump pad reservoir, and a resist opening in resist material disposed on a surface of the bump metal and adjacent the interconnect metal. The resist opening may be wider at an open end thereof than at an end in contact with the interconnect metal.
REFERENCES:
patent: 2004/0127009 (2004-07-01), Chen et al.
patent: 2006/0105560 (2006-05-01), Tseng et al.
Deshpande Nitin A.
Sahasrabudhe Shubhada H.
Buckley Maschoff & Talwalkar LLC
Intel Corporation
Kebede Brook
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