Method(s) of forming a thin layer

Details Method(s) of forming a thin layer Method(s) of forming a thin layer

2006-01-11

2009-06-30

Estrada, Michelle (Department: 2823)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S481000, C438S503000, C438S507000

Reexamination Certificate

active

07553742

ABSTRACT:
A method of forming a thin layer including providing a first single-crystalline silicon layer partially exposed through an opening in an insulation pattern and forming an epitaxial layer on the first single-crystalline silicon layer and forming an amorphous silicon layer on the insulation pattern, the amorphous silicon layer having a first portion adjacent the epitaxial layer and a second portion spaced apart from the first portion, wherein the amorphous silicon layer is formed on the insulation pattern at substantially the same rate at the first portion and at a second portion. The amorphous silicon layer may be formed to a uniform thickness without a thinning defect.

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