Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2005-10-18
2005-10-18
Phan, Trong (Department: 2827)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S171000, C365S173000
Reexamination Certificate
active
06956764
ABSTRACT:
A method to switch a scalable magnetoresistive memory cell including the steps of providing a magnetoresistive memory device (12) having two bits (18) and (20) sandwiched between a word line (14) and a digit line (16) so that current waveforms (104) and (106) can be applied to the word and digit lines at various times to cause a magnetic field flux HWand HDto rotate the effective magnetic moment vectors (86) and (94) of the device (12) by approximately 180°. Each bit includes N ferromagnetic layers (32) and (34, 42) and (44, 60) and (62, 72and74) that are anti-ferromagnetically coupled. N can be adjusted to change the magnetic switching volume of the bit. One or both bits may be programmed by adjusting the current in the word and/or digit lines.
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Engel Bradley N.
Salter Eric J.
Slaughter Jon M.
Freescale Semiconductor Inc.
King Robert L.
Phan Trong
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