Method of writing/reading data into/from memory cell and...

Details Method of writing/reading data into/from memory cell and... Method of writing/reading data into/from memory cell and...

2008-01-25

2010-06-01

Luu, Pho M. (Department: 2824)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185040, C365S185140

Reexamination Certificate

active

07729175

ABSTRACT:
Provided are a method of writing/reading data into/from a memory cell and a page buffer using different codes for the writing and reading operations. The method of writing/reading data into/from a memory cell that has a plurality of threshold voltage distributions includes a data writing operation and a data reading operation. In the data writing operation, data having a plurality of bits is written into the memory cell by using a plurality of writing codes corresponding to threshold voltage distributions. In the data reading operation, the data having a plurality of bits is read from the memory cell by using reading codes corresponding to the threshold voltage distributions from among the threshold voltage distributions. In the method of writing/reading data into/from a memory cell, a part of the writing codes is different from a corresponding part of the reading codes.

REFERENCES:
patent: 6529405 (2003-03-01), Chang
patent: 7035144 (2006-04-01), Kim et al.
patent: 7336532 (2008-02-01), Chen
patent: 7359248 (2008-04-01), Chen et al.
patent: 7529127 (2009-05-01), Park et al.

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