Method of wet cleaning a surface, especially of a material...

Details Method of wet cleaning a surface, especially of a material... Method of wet cleaning a surface, especially of a material...

2007-07-31

2007-07-31

Carrillo, Sharidan (Department: 1746)

Cleaning and liquid contact with solids

Processes

For metallic, siliceous, or calcareous basework, including...

C134S003000, C134S026000, C134S027000, C134S028000, C134S034000, C134S035000, C134S036000, C134S032000, C134S033000, C134S041000, C134S042000, C134S902000, C510S175000

Reexamination Certificate

active

11026186

ABSTRACT:
Method of wet cleaning a surface of at least one material chosen from silicon, silicon-germanium alloys, A(III)/B(V)-type semiconductors and epitaxially grown crystalline materials, such as germanium, in which method the following successive steps are carried out:a) the surface is brought into contact with an HF solution;b) the surface is rinsed with acidified, deionized water, then a powerful oxidizing agent is added to the deionized water and the rinsing is continued;c) optionally, step a) is repeated, once or twice, while optionally reducing the contacting time;d) step b) is optionally repeated, once or twice; ande) the surface is dried.Process for fabricating an electronic, optical or optoelectronic device, such as a CMOS or MOSFET device, comprising at least one wet cleaning step using the said cleaning method.

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