Method of wafer/substrate bonding

Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates

Reexamination Certificate

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C438S456000, C438S457000, C438S458000, C438S459000, C438S406000, C257SE21089

Reexamination Certificate

active

10512711

ABSTRACT:
A method of bonding two components by depositing an amorphous and non-hydrogenated intermediate layer (2) on one of the components (1,4) and arranging the components (1,4) in spaced relationship with the intermediate layer (2) therebetween. The method further comprises heating one or both of the components (1,4) before bringing the components (1,4) into contact. Finally, a voltage is applied to the components (1,4) to create a permanent bond between the two components.

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