Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Patent
1996-06-05
1998-07-21
Breneman, R. Bruce
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
438743, 438756, 438906, 134 13, 134 3, 252 793, 252 794, 510175, H01L 21302, C09K 1300
Patent
active
057834954
ABSTRACT:
A method of cleaning wafer surfaces includes providing a wafer surface and cleaning the wafer surface using at least hydrofluoric acid (HF) and an etch reducing component. The etch reducing component is from the group of (R).sub.4 NOH wherein R=(C.sub.1 -C.sub.20)alkyls, either straight or branch chained, and further wherein each R is independently a (C.sub.1 -C.sub.20)alkyl, preferably a (C.sub.1 -C.sub.4)alkyl, and more preferably one of tetra ethyl ammonium hydroxide (TEAH) and tetra methyl ammonium hydroxide (TMAH). A cleaning solution for use in cleaning a wafer surface includes an H.sub.2 O diluted HF solution and an etch reducing component from the group above, preferably, TMAH. A system for performing an HF vapor cleaning process includes a vapor chamber for positioning a wafer having a wafer surface and means for providing an HF vapor to the vapor chamber. The HF vapor includes an inert carrier gas, an HF component, one of a water vapor or an alcohol vapor, and an etch reducing component. The etch reducing component may be from the group above, preferably, TMAH.
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Hawthorne, deceased Richard C.
Li Li
Torek Kevin
Westmoreland Donald L.
Alanko Anita
Breneman R. Bruce
Micro)n Technology, Inc.
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