Method of wafer cleaning after metal etch

Details Method of wafer cleaning after metal etch Method of wafer cleaning after metal etch

1994-10-11

1996-07-09

Tung, T.

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

1566431, 1566461, 216 75, 216 77, 216 79, H01L 213065

Patent

active

055336353

ABSTRACT:
This invention provides a method for converting residual chlorine, remaining after using a chlorine specie etchant to etch metal electrodes in an integrated circuit device, to a stable polymer thereby eliminating any possibility for residual chlorine to cause corrosion of the metal electrodes. In conventional processing residual chlorine ions can combine with moisture and cause immediate corrosion of metal electrodes or can cause corrosion over time resulting in a degradation of device reliability. This invention provides a method of baking the integrated circuit device in an atmosphere of CF.sub.4, O.sub.2, or CF.sub.4 and O.sub.2 at elevated temperature, thereby converting any residual chlorine to a stable polymer. Since all the available chlorine is stabilized free chlorine is no longer available as a corrosion hazard.

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