Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-05-31
2005-05-31
Quach, T. N. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S368000, C257S382000, C257S760000
Reexamination Certificate
active
06900494
ABSTRACT:
The method comprises forming a layer comprised of BPSG above a substrate and a plurality of transistors, forming a dielectric layer above the BPSG layer, the dielectric layer comprised of a material having a dielectric constant greater than approximately 6.0, forming a plurality of openings in the dielectric layer and the BPSG layer, each of the openings allowing contact to a doped region of one of the transistors, and forming a conductive local interconnect in each of the openings. In another embodiment, the method comprises forming a layer comprised of BPSG above the substrate and between the transistors, forming a local interconnect in openings formed in the BPSG layer, reducing a thickness of the BPSG layer after the local interconnects are formed, and forming a dielectric layer above the BPSG layer and between the local interconnects, wherein the dielectric layer has a dielectric constant greater than approximately 6.0.
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Abbott Todd R.
Trevidi Jigish D.
Violette Mike
Wang Zhongze
Micro)n Technology, Inc.
Quach T. N.
Williams Morgan & Amerson P.C.
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