Method of using getter layer to improve metal to metal contact r

Details Method of using getter layer to improve metal to metal contact r Method of using getter layer to improve metal to metal contact r

1997-10-07

1999-11-23

Mulpuri, Savitri

Semiconductor device manufacturing: process

Gettering of substrate

By layers which are coated, contacted, or diffused

438656, 438677, 438906, 438625, 2041923, 20419217, H01L 2130, H01L 2144

Patent

active

059899840

ABSTRACT:
The present invention provides a method of using a getter layer on a semiconductor substrate having a first metal stack formed thereon to improve metal to metal contact resistance. The method comprises the steps of forming a getter layer, which may be titanium, on the first metal stack, wherein the getter layer has a higher affinity for oxygen or a higher getter capability than the first metal stack, substantially removing the getter layer by exposing the getter layer to radiation, and forming a second metal stack, which in an advantageous embodiment may also be titanium, on the first metal stack.

REFERENCES:
patent: 4981816 (1991-01-01), Kim et al.
patent: 5200360 (1993-04-01), Bradbury et al.
patent: 5284799 (1994-02-01), Sato
patent: 5348894 (1994-09-01), Gnade et al.
patent: 5514908 (1996-05-01), Liao et al.
patent: 5520563 (1996-05-01), Wallace et al.
patent: 5534463 (1996-07-01), Lee et al.
patent: 5719083 (1998-02-01), Komatsu
patent: 5851870 (1998-12-01), Alugbin et al.
patent: 5891803 (1999-04-01), Gardner
patent: 5897368 (1999-04-01), Cole, Jr. et al.

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