Method of using an electron beam

Details Method of using an electron beam Method of using an electron beam

1982-10-18

1985-03-05

Anderson, Bruce C.

Radiant energy

Means to align or position an object relative to a source or...

G01N 2100, G01N 2300

Patent

active

045033340

ABSTRACT:
When an electron beam is used to effect a process at two adjacent surface areas of a target, such as a semiconductor wafer coated with an electron sensitive resist, various alignment errors can occur including wafer distortion. The provision of a reference marker, for example a square-etched depression, at the surface of the target between the adjacent surface areas enables detection of any misalignment. Thus, after effecting the process at one of the areas, an electron beam having substantially the same size and shape as the reference marker is directed toward the predetermined position of the reference marker. Back-scattered electrons are then detected to give a signal representative of any deviation between the actual position and the predetermined position of the reference marker so that the electron beam can be correctly aligned before carrying out the process at the second of the two surface areas. For increased accuracy of alignment, an array of reference markers may be provided between the two adjacent areas.

REFERENCES:
patent: 4145597 (1979-03-01), Yasuda
"Computer-Controlled Scanning Electron Microscope System for High Resolution Microelectronic Pattern Fabrication", Ozdemir et al., IEEE Trans. on Electron Dev., vol. 19, No. 5, May 1972, pp. 624-628.
"Producing Registration Marks for Electron Beam Exp.", Hatzakis et al., IBM Tech. Bull., vol. 12, No. 10, Mar. 1970, p. 1721.
"Optimization of Alignment Marks and their Electron Signals in a Semiconductor Process", Friedrich et al., J. Electrochem. Soc., vol. 124, No. 4, pp. 627-629.

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