Method of using an e-fuse device

Details Method of using an e-fuse device Method of using an e-fuse device

2007-03-06

2007-03-06

Nguyen, Tuan T. (Department: 2824)

Static information storage and retrieval

Read/write circuit

Having fuse element

C365S185050, C365S185190

Reexamination Certificate

active

10904401

ABSTRACT:
A method of using an e-fuse device is provided. The e-fuse device includes a poly-fuse having one end connected to a source/drain region of a MOS transistor and the other end biased to a voltage (VFS). In operation, a gate of the MOS transistor receives a step waveform pulse signal. The step waveform pulse signal encompasses a pre-heat voltage (Vp) at a first level during time period (T1-Tp) and a maximum input voltage (VIH) at a second level during time period (Tp-T2). The pre-heat voltage (Vp) is smaller than the maximum input voltage (VIH). The step waveform pulse signal is confined to a minimum input voltage (VIL) before T1and after T2. Preferably, the time period (T1-Tp) is longer than 5 μs.

REFERENCES:
patent: 5519654 (1996-05-01), Kato et al.
patent: 6178126 (2001-01-01), Kirihata et al.
patent: 6208549 (2001-03-01), Rao et al.
patent: 6570806 (2003-05-01), Bertin et al.

Affiliated with

Also associated with

Rating

Method of using an e-fuse device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of using an e-fuse device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of using an e-fuse device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3773417