Method of using an adhesion precursor layer for chemical...

Details Method of using an adhesion precursor layer for chemical... Method of using an adhesion precursor layer for chemical...

2007-01-30

2007-01-30

Nguyen, Thanh (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S681000, C438S685000, C438S686000, C438S637000, C438S627000

Reexamination Certificate

active

10687186

ABSTRACT:
An exemplary embodiment is related to a method of using an adhesion precursor in an integrated circuit fabrication process. The method includes providing a gas of material over a dielectric material and providing a copper layer over an adhesion precursor layer. The adhesion precursor layer is formed by the gas, and the dielectric material includes an aperture.

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