Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device
Patent
1995-12-05
1998-06-02
Duda, Kathleen
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Making electrical device
430317, 430323, G03F 700
Patent
active
057597456
ABSTRACT:
A method of using amorphous silicon as a photoresist is disclosed herein. The photoresist is produced by first forming a thin film including at least an outermost layer which includes hydrogenated amorphous silicon onto a suitable surface. Predetermined areas of the outermost layer are then exposed to ultraviolet light. Following exposure, the unexposed areas of the outermost layer, along with any underlying associated portions of the film, are removed so as to reveal the surface in areas which underlie the unexposed outermost layer areas. In a first feature, the outermost layer is formed at a temperature no greater than about 100.degree. C. In a second feature, the predetermined areas of the outermost layer are exposed to ultraviolet light at a temperature no greater than about 100.degree. C. In a third feature, the film is formed entirely from hydrogenated amorphous silicon. In a fourth feature, the film is formed by first applying an amorphous silicon layer to the surface and, thereafter, hydrogenating the amorphous silicon layer to form the outermost layer.
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A. Takano, M. Kawasaki and H. Koinuma; In Situ Determination of Optical Constants of Growing Hydrogenated Amorphous Silicon Film by P-Polarized Light Reflectance Measurement on the Surface; Jun. 1, 1993; Journal of Applied Physics 73, American Institute of Physics.
Duda Kathleen
Materials Research Group, Inc.
Shear Stephen C.
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