Fishing – trapping – and vermin destroying
Patent
1995-06-06
1997-03-25
Dang, Trung
Fishing, trapping, and vermin destroying
437228, 1566451, H01L 21302
Patent
active
056144440
ABSTRACT:
A method of using additives with silica-based slurries to enhance metal selectivity in polishing metallic materials utilizing a chemical-mechanical polishing (CMP) process. Additives are used with silica-based slurries to passivate a dielectric surface, such as a silicon dioxide (SiO.sub.2) surface, of a semiconductor wafer so that dielectric removal rate is reduced when CMP is applied. The additive is comprised of at least a polar component and an apolar component. The additive interacts with the surface silanol group of the SiO.sub.2 surface to inhibit particles of the silica-based slurry from interacting with hydroxyl molecules of the surface silanol group. By applying a surface passivation layer on the SiO.sub.2 surface, erosion of the SiO.sub.2 surface is reduced. However, the metallic surface is not influenced significantly by the additive, so that the selectivity of metal removal over oxide removal is enhanced.
REFERENCES:
patent: 4702792 (1987-10-01), Chow et al.
patent: 4944836 (1990-07-01), Beyer et al.
patent: 4954142 (1990-09-01), Carr et al.
patent: 5084071 (1992-01-01), Nenadic et al.
patent: 5225034 (1993-07-01), Yu et al.
patent: 5244534 (1993-09-01), Yu et al.
patent: 5358743 (1994-10-01), Hampden-Smith et al.
patent: 5391258 (1995-02-01), Brancaleoni et al.
"Selective CVD Of Copper On Tungsten Versus SiO2 From (B-diketonate)CuLn Copper (I) Precursors Via SiO2 Surface Modification;"Jain et al.; Advanced Metallization for ULSI Applications 1992; Conference Proceedings ULSI-VIII; Materials Research Society; Oct. 20-22, 1992;pp. 83-89.
"FTIR Studies Of Silica Surface Passivation And Subsequent Adsorption/Desorption Of Copper Metalorganic Precursors;" Farkas et al.; Suface Chemical Cleaning and Passivation for Semiconductor Processing; Mat. Res. Soc. Symp. Proc. vol. 315; Materials Research Society; Apr. 13-15, 1993; pp. 97-104.
"Passivation Of Silicon Dioxide Surface Hydroxyl Groups To Control Selectivity During Chemical Vapor Deposition Of Copper From Copper (I) Compounds;" Jain et al.; Surface Chemical Cleaning and Passivation for Semiconductor Processing; Mat. Res. Soc. Symp. Poc. vol. 315; Materials Research Society; Apr. 13-15, 1993; pp. 105-110.
"Effect Of Polishing Pad Material Properites On Chemical Mechanical Polishing (CMP) Processes;" Bajaj et al.; Advanced Metallization for Devices and Circuits--Science, Technology and Manufacturability; Mat. Res. Soc. Symp. Proc. vol. 337; Materials Reserach Society; Apr. 4-8, 1994; pp. 637-644.
"Oxidation And Etching Of Tungsten In CMP Slurries;" Farkas et al.; Advanced Metallization for ULSI Applications in 1994; Conference Proceedings ULSI-X; Materials Research Society; Oct. 4-6, 1994; pp. 25-32.
"Chemical-Mechanical Polishing for Fabrication Patterned W Metal Features as Chip Interconnects;" Kaufman et al.; J. Electrochem. Soc., vol. 138, No. 11, Nov. 1991; pp. 3460-3465.
"Tribology Analysis of Chemical-Mechanical Polishing;" Runnels et al.; J. Electrochem. Soc., vol. 141, No. 6; Jun. 1994; pp. 1698-1701.
"FTIR Studies of the Adsorption/Desorption Behavior of Cu Chemical Vapor Deposition Precursors on Silica;" Farkas et al.; J. Electrochem. Soc., vol. 141, No. 12; Dec. 1994; pp. 3539-3546.
"FTIR Studies of the Adsorption/Desorption Behavior of Cu Chemical Vapor Deposition (CVD) Precursors on Silica;" Farkas et al.; J. Electrochem. Soc., vol. 141, No. 12; Dec. 1994; pp. 3547-3555.
"Control of selectivity during chemical vapor deposition of copper from copper (I) compounds via silicon dioxide surface modification;" Jain et al.; Appl. Phys. Lett. 61 (22); 30 Nov. 1992; pp. 2662-2664.
"Selective and blanket copper chemical vapor depositon for ultra-large-scale integration;" Jain et al.; J. Vac. Sci. Technol. B 11(6); Nov./Dec. 1993; pp. 2107-2113.
"FTIR Studies of the Adsoprtion/Desorption Behavior of Copper Chemical Vapor Deposition Precursors on Silica. 1. Bis (1,1,1,5,5,5-hexafluroroacetylacetonato) copper (II);" Farkas et al.; The Journal of Physical Chemistry, vol. 98, No. 27; 1994; pp. 6753-6762.
"FTIR Studies of the Adsorption/Desorption Behavior of Copper Chemical Vapor Deposition Precursors on Silica. 2. (1,1,1,5,5,5-Hexafluroracetylacetonato) (2-butyne) copper (I);" Farkas et al.; The Journal of Physical Chemistry, vol. 98, No. 27; 1994; pp. 6763-6770.
"Overview of Metal CVD;" Kodas et al.; Chapter 9 of The Chemistry of Metal CVD; pp. 429-499; VCH Verlagsgesellschaft mbH, Weinheim (Germany) and VCH Publishers Inc., New York, NY.; 1994.
Farkas Janos
Jairath Rahul
Stell Matt
Tzeng Sing-Mo
Dang Trung
Digital Equipment Corp.
Intel Corporation
National Semiconductor Corp.
Sematech Inc.
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