Method of use for photopatternable dielectric materials for...

Details Method of use for photopatternable dielectric materials for... Method of use for photopatternable dielectric materials for...

2011-01-11

2011-01-11

Lee, Sin J. (Department: 1795)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Radiation sensitive composition or product or process of making

C430S311000, C430S325000, C430S328000, C430S330000, C430S905000, C430S907000, C430S919000, C430S920000, C430S921000, C430S925000

Reexamination Certificate

active

07867689

ABSTRACT:
A method. The method includes dip coating a film of a composition on a silicon wafer substrate. The composition includes a polymer blend of a first polymer and a second polymer. The first polymer is a substituted silsesquioxane copolymer. The second polymer is a polysilsesquioxane having silanol end groups. The composition includes a photosensitive acid generator, an organic base, and an organic crosslinking agent. The film is patternwise imaged and at least one region is exposed to radiation having a wavelength of about 248 nanometers. The film is baked, resulting in inducing crosslinking in the film. The film is developed resulting in removal of base-soluble unexposed regions of the film, wherein a relief pattern from the film remains. The relief pattern is cured at a temperature between about 300° C. and about 450° C., and the curing utilizes a combination of thermal treatment with UV radiation.

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