Method of uniform seeding to control grain and defect...

Details Method of uniform seeding to control grain and defect... Method of uniform seeding to control grain and defect...

2007-03-27

2007-03-27

Weiss, Howard (Department: 2814)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

C257S066000

Reexamination Certificate

active

10681509

ABSTRACT:
A method to create a polysilicon layer with large grains and uniform grain density is described. A first amorphous silicon layer is formed. A crystallizing agent is selectively introduced in a substantially symmetric pattern, preferably symmetric in two dimensions, across an area of the first amorphous layer. The crystallizing agent may be, for example, silicon nuclei, germanium, or laser energy. A mask layer is formed on the amorphous silicon layer, and holes etched in the mask layer in a symmetric pattern to expose the amorphous layer to, for example, silicon nuclei or germanium) only in the holes. The mask layer is removed and a second amorphous layer formed on the first. If laser energy is used, no mask layer or second amorphous layer is generally used. The wafer is annealed to form a polysilicon layer with substantially no amorphous silicon remaining between the grains.

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