Method of undercut anisotropic etching of semiconductor material

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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357 55, 156651, 156653, 156657, 1566591, 156662, 29580, 29610SG, 73517R, 338 2, 338 4, 338 42, 338 47, H01L 2984, H01L 21308, H01L 21306, G01L 122

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046009345

ABSTRACT:
An etch stopped layer portion overlying a (100) or (110) major face of a diamond cubic semiconductor material is undercut anisotropically etched by orienting a side edge of the etch stopped layer portion which is to be undercut, at an angle to the most nearly parallel {111} trace on the (100) or (110) face. The etch time is further reduced by slotting through the etch stopped layer with slots oriented at an angle to the {111} traces on the underlying (100) or (110) face. Undercut bridge structures are formed by undercutting quadrilateral etch stopped layer portions from opposite sides of the quadrilateral or from the sides plus slots forming diagonals of {111} trace quadrilaterals having combined areas coextensive with the area to be undercut.

REFERENCES:
patent: 4144516 (1979-03-01), Aine
patent: 4293373 (1981-10-01), Greenwood
patent: 4342227 (1982-08-01), Petersen et al.
patent: 4472239 (1984-09-01), Johnson et al.
Petersen, K. E., "Dynamic Micromechanics on Silicon: Techniques and Devices," IEEE Transactions on Electronic Devices, vol. ED-25, No. 10, Oct. 1978, pp. 1241-1250.
Kendall, Don L., "On Etching Very Narrow Grooves in Silicon", Applied Physics Letters, vol. 26, No. 4, Feb. 15, 1975, pp. 195-198.
Bassous, Ernest, "Fabrication of Novel Three-Dimensional Microstructures by the Anisotropic Etching of (100) and (110) Silicon", IEEE Transactions on Electronic Devices, vol. ED-25, No. 10, Oct. 1978, pp. 1178-1185.
Bean, Kenneth E., "Anisotropic Etching of Silicon", IEEE Transactions on Electronic Devices, vol. ED-25, No. 10, Oct. 1978, pp. 1185-1193.

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