Method of treating surface of semiconductor substrate

Details Method of treating surface of semiconductor substrate Method of treating surface of semiconductor substrate

1994-04-14

1995-10-24

McFarlane, Anthony

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

437946, 437228, B44C 122

Patent

active

054606918

ABSTRACT:
It is an object of the present invention to provide a method capable of performing surface treatment of a plurality of semiconductor substrates at one time and treating them uniformly with high selectivity. A plurality of semiconductor substrates having interlayer insulating films thereon are prepared. The plurality of semiconductor substrates are arranged in a vertical direction at predetermined intervals in a reaction chamber so that one face of each faces upwards and the other face of each faces downwards. Etching gas for etching the surfaces of the interlayer insulating films is sent into the reaction chamber in a direction vertical to the surfaces of said semiconductor substrates under low pressure.

REFERENCES:
patent: 5073232 (1991-12-01), Ohmi et al.
patent: 5089441 (1992-02-01), Moslehi
"Gas-Phase Selective Etching of native Oxide", Nobuhiro Miki et al., EEE Transactions on Electron Devices, vol. 37, No. 1, Jan. 1990, pp. 107-115 and p. 572.

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