Method of treating semiconductor substrates

Details Method of treating semiconductor substrates Method of treating semiconductor substrates

1993-09-14

1995-01-10

Powell, William

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156657, 156662, 437233, 437241, 437248, H01L 21306, B44C 122, C03C 1500

Patent

active

053803990

ABSTRACT:
To heat treat a semiconductor substrate without forming an oxide film on the surface thereof, the method of heat treating a semiconductor substrate, comprises: a step 1 of carrying a semiconductor substrate into a heat treating chamber heated at a temperature 150.degree. C. or lower; a step 2 of heating the heat treating chamber up to about 200.degree. C. to emit moisture adhering to the semiconductor substrate; a step 3 of introducing an etching gas into the heat treating chamber to etch an oxide film formed on the surface of the semiconductor substrate; and a step 4 of raising the temperature within the heat treating chamber up to a heat treating temperature to heat treat the semiconductor substrate.

REFERENCES:
patent: 4981811 (1991-06-01), Feygenson et al.

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