Method of treating samples

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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Details

156646, 156651, 156656, 156665, 156668, 134 1, 134 2, 134 31, C23F 1100

Patent

active

053803973

ABSTRACT:
A post-etch treatment method capable of imparting high corrosion prevention performance to the aluminum-containing wiring films. The sample of aluminum-containing wiring material that is etched using the halogen-type gas is treated with the plasma of a gas that has the oxygen component, and the resist formed on the aluminum-containing wiring material is reacted with oxygen and is removed. Further, the plasma is generated using a gas having the hydrogen component or this gas is liquefied into droplets thereof on the sample surface, so that halogen components (Cl, Br, etc.) adhered to the aluminum-containing wiring material through the etching treatment are reacted with hydrogen and are effectively removed in the form of hydrogen chloride (HCl) or hydrogen bromide (HBr). This makes it possible to obtain the aluminum-containing wiring material having high corrosion prevention performance.

REFERENCES:
patent: 4325984 (1982-04-01), Galfo et al.
Extended Abstracts, vol. 80-2, Oct. 1980. pp. 851-853 Abstract No. 329. "Application of plasma etching to multilevel metal structures".
IBM Technical Disclosure Bulletin, vol. 24, No. 113 Apr. 1982-Plasma Corrosion Inhibition (H. R. Potts).

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