Method of treating photoresists

Radiant energy – Inspection of solids or liquids by charged particles – Analyte supports

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2504921, G03F 702, H01L 2130

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049009389

ABSTRACT:
A method of treating positive photoresist materials applied on a semiconductor wafer placed on a support, which meets the demand for high-speed treatment and improvement in heat-resistance and plasma-resistance of the developed positive photoresist image. The developed positive photoresist image is exposed to radiant lights including ultraviolet rays in an chamber filled with gas in which oxygen and/or moisture are reduced or not included.

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patent: 4613404 (1986-09-01), Tabei
patent: 4749436 (1988-06-01), Minato et al.
H. Hiraoka and J. Pacansky; J. Vac. Sci. Tech., 19 (1981), p. 1132.
H. Hiraoka and J. Pacansky: J. Electrochem. Soc., 128 (1981), p. 2645.
R. Allen et al: J. Electrochem. Soc., 129 (1982), p. 1379.
J. C. Matthews and J. I. Willmott, Jr.: Microllithography III, SPIE, (1984).
Y. Takasu et al.: Proc. Dry Process Symposium, (1984), p. 60.
H. Yanazawa et al.: J. Appl. Polymer Sci., 30 (1985), p. 547.

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