Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-11-28
2006-11-28
Geyer, Scott B. (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257SE21540
Reexamination Certificate
active
07141496
ABSTRACT:
A method of treating a dielectric surface portion of a semiconductor substrate, comprising the steps of: (a) providing a semiconductor substrate having a dielectric surface portion; and then (b) treating said dielectric surface portion with a coating reagent, the coating reagent comprising a reactive group coupled to a coordinating group, with the coordinating group having a metal bound thereto, so that the metal is deposited on the dielectric surface portion to produce a surface portion treated with a metal.
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U.S. Appl. No. 10/681,515, filed Oct. 8, 2003 entitledMethod of Coating Microelectronic Substrates.
Brainard David
DeYoung James P.
Gross Stephen M.
McClain James B.
Taylor Doug
Geyer Scott B.
MiCell Technologies, Inc.
Myers Bigel Sibley & Sajovec P.A.
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