Method of treating microelectronic substrates

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C257SE21540

Reexamination Certificate

active

07141496

ABSTRACT:
A method of treating a dielectric surface portion of a semiconductor substrate, comprising the steps of: (a) providing a semiconductor substrate having a dielectric surface portion; and then (b) treating said dielectric surface portion with a coating reagent, the coating reagent comprising a reactive group coupled to a coordinating group, with the coordinating group having a metal bound thereto, so that the metal is deposited on the dielectric surface portion to produce a surface portion treated with a metal.

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patent: 6491978 (2002-12-01), Kalyanam
patent: 6497921 (2002-12-01), Carbonell et al.
patent: 6641678 (2003-11-01), DeYoung et al.
patent: 6653236 (2003-11-01), Wai et al.
patent: 6953041 (2005-10-01), DeYoung et al.
patent: 2003/0198895 (2003-10-01), Toma et al.
patent: WO 02/066176 (2002-08-01), None
U.S. Appl. No. 10/681,515, filed Oct. 8, 2003 entitledMethod of Coating Microelectronic Substrates.

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