Etching a substrate: processes – Gas phase etching of substrate – Application of energy to the gaseous etchant or to the...
Reexamination Certificate
2006-08-07
2009-08-11
Culbert, Roberts (Department: 1792)
Etching a substrate: processes
Gas phase etching of substrate
Application of energy to the gaseous etchant or to the...
C438S711000
Reexamination Certificate
active
07572386
ABSTRACT:
A method of pre-treating a mask layer prior to etching an underlying thin film is described. A thin film, such as a dielectric film, is etched using plasma that is enhanced with a ballistic electron beam. In order to reduce the loss of pattern definition, such as line edge roughness effects, the mask layer is treated with an electron beam in the absence of an atomic halogen specie prior to proceeding with the etching process.
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Chen Lee
Koshiishi Akira
Sawada Ikuo
Ventzek Peter L.G.
Culbert Roberts
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Tokyo Electron Limited
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