Method of transferring a thin film to an alternate substrate

Details Method of transferring a thin film to an alternate substrate Method of transferring a thin film to an alternate substrate

1993-12-10

1995-02-21

Powell, William

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156631, 156643, 156633, 156662, 437 86, 437974, H01L 21306, B44C 122

Patent

active

053912578

ABSTRACT:
A method is described for transferring a thin film of arbitrarily large area from an original substrate to an alternate substrate. An etch stop layer is provided below an epitaxial layer, for example, grown on a semiconductor substrate. In a single transfer process, the epitaxial layer is bonded to a rigid host substrate having desirable thermal, electromagnetic, and/or mechanical properties. The original growth substrate is then removed from the transferred epitaxial layer using the etch stop layer. In a double transfer process, the epitaxial layer is first bonded to a rigid and porous temporary substrate using a thermally or chemically releasable resin, for example. The original growth substrate is removed using the etch stop layer so that the original substrate side of the epitaxial layer can be bonded to a rigid host substrate, as described above. The temporary substrate is then removed using the releasable resin to leave the transferred thin film attached to the host substrate.

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E. Yablonovitch et al., "Van der Waals bonding of GaAs on Pd leads to a permanent, solid-phase-topotaxial, metallurgical bond," Appl. Phys. Lett., vol. 59, No. 24, pp. 3159-3161, Dec. 9, 1991.
C. Camperi-Binestet et al., "Alignable Epitaxial Liftoff of GaAs Materials with Selective Deposition Using Polyimide Diaphragms", IEEE Transactions Photonics Technology Letters, vol. 3, No. 12, pp. 1123-1126, Dec. 1991.
J. Callahan et al., "Alignable Liftoff Transfer of Device Arrays via a Single Polymeric Carrier Membrane," Electronics Letters, vol. 29, No. 11, pp. 951-953, May 27, 1993.

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